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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4580 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 450V(Min) *Fast Switching speed APPLICATIONS *Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VCEX VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage VEB= 5V Emitter-Base Voltage VALUE 600 450 UNIT V V Collector Current-Continuous Collector Current-Peak w ww scs .i 600 7 V V 8 A 16 4 8 50 150 A A A W .cn mi e Base Current-Continuous Base Current-Peak Total Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range IBM PT TJ Tstg -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 2.5 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 0.2A; IB= 0 IC= 4A; IB= 0.8A B 2SC4580 MIN 450 TYP. MAX UNIT V 1.0 1.5 100 100 100 V V A A A IC= 4A; IB= 0.8A B At rated Voltage At rated Voltage At rated Voltage IC= 4A; VCE= 5V Current-Gain--Bandwidth Product Switching times ton tstg tf Turn-on Time Storage Time Fall Time w w scs .i w IC= 1mA; VCE= 5V IC= 0.8A; VCE= 10V .cn mi e 10 5 20 MHz 0.5 2.0 0.2 s s s IC= 4A, IB1= 0.8A; IB2= -1.6A RL= 37.5; VBB2= 4V isc Websitewww.iscsemi.cn 2 |
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